Becki Paris

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Utilizing palladium for addressing contact issues of buried oxide thin film transistors

Editors’ notes This article has been reviewed according to Science X’s editorial process and policies. Editors have highlighted the following attributes while ensuring the content’s credibility: fact-checked peer-reviewed publication trusted source proofread by Tokyo Institute of Technology A novel method that employs palladium to inject hydrogen into the deeply buried oxide-metal electrode contacts of amorphous oxide

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